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HGTG30N60C3D
273-040
| Product Stock | back order |
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HGTG30N60C3D merupakan IGBT transistor yang memiliki kemampuan switching cepat pada tegangan tinggi, input impedansi tinggi dan kerugian konduksi transistor yang rendah
Spesifikasi :
- Daya disipasi : 208 W
- Vces : 600 V (maks)
- Vce (sat) : 1.5 V
- Vges : +/- 20 V
- Ic : 63 A
- Kemasan :
Spesifikasi :
- Daya disipasi : 208 W
- Vces : 600 V (maks)
- Vce (sat) : 1.5 V
- Vges : +/- 20 V
- Ic : 63 A
- Kemasan :
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