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IRF630N

273-034

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Rp 3.650

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HEXFET® Power MOSFET

Datasheet

KemasanTO-220AB
PolaritasN-Channel
Daya disipasi82W
Drain source voltage vds1.3V
Drain source breakdown voltage200V
Gate-source voltage±20V
Continuous drain current9.3A (@VGS10V Tc25°C)
Gate-source cutoff voltage2.0V-4.0V (@ID 250µA)
Hambatan drain-source rds (on)0.30O

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IRF630N

IRF630N

HEXFET® Power MOSFET

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