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BS170

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Rp 5.500

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N-Channel Enhancement Mode FET.
KemasanTO-92
PolaritasN-Channel
Daya disipasi830 mW (maks)
Drain source voltage vds60 V (maks)
Drain source breakdown voltage60 V (min)
Gate-source voltage+/- 20 V (maks)
Continuous drain current500 mA (maks)
Gate-source cutoff voltage-
Hambatan drain-source rds (on)5 ohm (maks)

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BS170

BS170

N-Channel Enhancement Mode FET.

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