MG50Q2YS50 Toshiba

Silicon N Channel IGBT
Spesifikasi:
- Vces : 1200V (maks)
- Vges : ± 20V
- Ic : 156A @ 1ms
- If : 100A @ 1ms
- Collector power dissipation (Pc) : 400W (maks rating)
- Isolation voltage : 2500V (maks rating)
- Reverse recovery time : 0.25µ s

Datasheet