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IRFZ24N

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Rp 7.550

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N-channel MOSFET yang didukung oleh teknologi pemrosesan terkini.
KemasanTO-220AB
PolaritasN-Channel
Daya disipasi45 W (maks)
Drain source voltage vds55 V (maks)
Drain source breakdown voltage55 V (min)
Gate-source voltage+/- 20 V
Continuous drain current17 A (maks) @ 25 deg. Celcius
Gate-source cutoff voltage-
Hambatan drain-source rds (on)70 mohm (maks)

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IRFZ24N

IRFZ24N

N-channel MOSFET yang didukung oleh teknologi pemrosesan terkini.

Write a review

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