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IRF820

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Rp 6.250

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N-channel power MOSFET.
KemasanTO-220AB
PolaritasN-Channel
Daya disipasi50 W (maks)
Drain source voltage vds500 V (maks)
Drain source breakdown voltage500 V (min)
Gate-source voltage+/- 20 V (maks)
Continuous drain current2.5 A (maks)
Gate-source cutoff voltage-
Hambatan drain-source rds (on)3.0 ohm (maks)

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IRF820

IRF820

N-channel power MOSFET.

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