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2SK30A

273-014

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Rp 3.750

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Silicon N-Channel Junction FET

Datasheet

KemasanTO-92
PolaritasN-Channel
Daya disipasi250mW maks (@Ta25°C)
Drain source voltage vds10V
Drain source breakdown voltage-
Gate-source voltage-50V maks (@Ta25°C)
Continuous drain current0.3 to 6.5 mA (@Ta25°C VDS10V VGS0V)
Gate-source cutoff voltage-0.4V to -5.0V (@Ta25°C)
Hambatan drain-source rds (on)-

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2SK30A

2SK30A

Silicon N-Channel Junction FET

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