SI7611DN-T1-GE3

Power MOSFET P-Channel.

Spesifikasi:

• Channel Type: P-Channel
• Drain Source Voltage (VDS): 40V
• Continuous Drain Current (Id): 18A
• Drain Source On State Resistance: 0.021 ohm
• Rds (on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3V
• Power Dissipation: 39W
• No. of Pins: 8 Pins
• Operating Temperature Max: 150°C

Dokumen:

1. Datashet (Link)

Produk Terkait:

1. IRFZ24N
2. IRLML6402TRPBF